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Researchers are advancing graphene spintronics with 1D contacts to improve the mobility of nanoscale devices.

Credit: University of Manchester

Researchers at the University of Manchester may have cleared a major hurdle on the road to quantum computing, demonstrating the gradual improvement in spin transport properties of nanoscale graphene-based electronic devices.


The team consists of researchers from the National Graphene Institute (NGI), led by Dr. Ivan Bella Marun, and Japanese collaborators, including students who are internationally funded by Ecuador and Mexico. Single layer graphene Encapsulated with another 2D material (Hexagonal boron nitride) So-called van der Waals heterostructure with one-dimensional contact (main photo above).This architecture has been observed to provide very high quality Graphene Reduces interference or electronic “doping” from channels, traditional 2D tunnel contacts.

As is known, “spintronics” devices have the potential to provide higher energy efficiency and lower dissipation compared to traditional electronics that rely on charging current.As a rule, phones and tablets that operate with spin-based transistors and memory are speed and Storage capacityBeyond Moore’s Law.

As published in Nano letterManchester team measurement Electron mobility Up to 130,000 cm2Low temperature / Vs (20K or -253)o oC). For comparison, the only previously published effort to manufacture a device with 1D contacts achieved mobility of less than 30,000 cm.2At / Vs, the 130k value measured by NGI is higher than the value recorded on other previous graphene channels with demonstrated spin transport.

The researchers also recorded spin diffusion lengths close to 20 μm.If longer is better, the spin diffusion length of the most common conductive materials (metals and semiconductors) is

“Their research is a contribution to the field of graphene pintronics. They have achieved the highest carrier mobility ever for graphene-based spintronics devices,” said Victor Guarochico, lead author of the study. These aspects open up the possibility of exploring logical architectures using lateral spintronics elements that require long-range spin transport. “

Co-author Chris Anderson said, “This study provides exciting evidence of an important and novel approach to controlling the spin transport of graphene channels, thereby rivaling advanced modern charge-based devices. A two-layer graphene device with 1D contact, built on this study, is currently being characterized by the presence of an electrostatically adjustable bandgap, paving the way for devices with the ability to. It enables an additional dimension in spin transport control. ”


Graphene and 2D materials can move electronics beyond “Moore’s Law”


For more information:
Victor H. Guarochico-Moreira et al, Adjustable spin injection of high quality graphene with one-dimensional contact, Nano letter (2022). DOI: 10.1021 / acs.nanolett.1c03625

Quote: Researchers advance graphene spintronics with 1D contacts to improve the mobility of nanoscale devices (February 11, 2022). .html

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Researchers are advancing graphene spintronics with 1D contacts to improve the mobility of nanoscale devices.

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